Rainbow-electronics DS1859 Manual do Utilizador descarregar pdf (Página 20)

DS1859

Dual, Temperature-Controlled Resistors with

Internally Calibrated Monitors

20 ____________________________________________________________________

MEMORY

LOCATION

(hex)

EEPROM/

SRAM

R/W

DEFAULT

SETTING

(hex)

NAME OF

LOCATION

FUNCTION

5 — — 0 ADEN

Controls if the device responds to one or two device

addresses (see the Memory Description section and

Table 5).

4 — — 0 ADFIX

Controls the means by which Main and Auxiliary Device

addresses are set (see the Memory Description section

and Table 5).

3 — — 0 APEN

Controls auxiliary write protect. See the Memory

Description section.

2 — — 0 MPEN

Controls main write protect. See the Memory Description

section.

1 — — 0 INV1

Configures buffer 1 with OUT1 = MINT +

(INV1 [XOR] IN1).

0 — — 0 INV2 Configures buffer 2 with OUT2 = INV2 [XOR] IN2.

8A to 8B EEPROM — — Reserved

8C EEPROM R/W A2 Device address

Contains Main Device address if the bit ADFIX = 1. If

ADFIX = 0, then address A2h is used.

8D EEPROM — — Reserved —

8E EEPROM R/W

Contains bits used to perform right shift operations on the

A/D output converter. See the Right Shift A/D Conversion

Result section.

7——0 —

6 — — 0 MON1

Right Shift Control MSB

5 — — 0 MON1

4 — — 0 MON1

Right Shift Control LSB

3——0 —

2 — — 0 MON2

Right Shift Control MSB

1 — — 0 MON2

0 — — 0 MON2

Right Shift Control LSB

8F EEPROM R/W

Contains bits used to perform right shift operations on the

A/D output converter. See the Right Shift A/D Conversion

Result section.

7——0 —

6 — — 0 MON3

Right Shift Control MSB

5 — — 0 MON3

4 — — 0 MON3

Right Shift Control LSB

3——0 —

2——0 —

1——0 —

0——0 —

Table 01h (continued)

1 2 ... 15 16 17 18 19 20 21 22 23 24 25 26 27 28

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