Rainbow-electronics DS1258Y_AB Manual do Utilizador descarregar pdf (Página 7)

DS1258Y/AB

100395 7/9

POWER-DOWN/POWER-UP CONDITION

3.2V

REC

DATA RETENTION

TIME

LEAKAGE CURRENT

SUPPLIED FROM

LITHIUM CELL

, CEU, CEL

DS1230Y 4.50V

DS1230AB 4.75V

SEE NOTE 11

POWER-DOWN/POWER-UP TIMING (t

: See Note 10)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

CEU, CEL, WE at V

before

Power-Down

s

Slew from V

to 0V t

300

s

Slew from 0V to V

300

s

CEU, CEL or at V

after

Power-Up

REC

2 125 ms

= 25°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Expected Data Retention Time t

10 years 9

WARNING:

Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode.

NOTES:

1. WE is high for a read cycle.

2. OE

= V

or V

. If OE = V

during write cycle, the output buffers remain in a high impedance state.

3. t

is specified as the logical AND of CEU or CEL and WE. t

is measured from the latter of CEU, CEL or

going low to the earlier of CEU, CEL or WE going high.

1 2 3 4 5 6 7 8 9

DS1258Y/AB 1
128K x 16 Nonvolatile SRAM 1
READ MODE 2
WRITE MODE 2
READ/WRITE FUNCTION Table 1 2
DATA RETENTION MODE 3
FRESHNESS SEAL 3
100395 4/9 4
WRITE CYCLE 2 6
WRITE CYCLE 1 6
DC TEST CONDITIONS 8
AC TEST CONDITIONS 8
ORDERING INFORMATION 8

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