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DS1258Y/AB

128K x 16 Nonvolatile SRAM

DS1258Y/AB

PRODUCT PREVIEW

100395 1/9

FEATURES

• 10 year minimum data retention in the absence of

external power

• Data is automatically protected during a power loss

• Separate upper byte and lower byte chip select inputs

• Unlimited write cycles

• Low–power CMOS

• Read and write access times as fast as 70 ns

• Lithium energy source is electrically disconnected to

retain freshness until power is applied for the first time

• Full ±10% operating range (DS1258Y)

• Optional ±5% operating range (DS1258AB)

• Optional industrial temperature range of –40°C to

85°C, designated IND

PIN ASSIGNMENT

40–PIN ENCAPSULATED PACKAGE

740 MIL EXTENDED

CEU

CEL WE

A16DQ15

DQ14

DQ13

DQ11

DQ10

DQ9

DQ8

GND

DQ7

DQ5

DQ4

DQ12

DQ3

DQ2

DQ1

DQ0

DQ6

A15

A14

A13

A12

A11

A10

GND

PIN DESCRIPTION

A0–A16 – Address Inputs

DQ0–DQ15 – Data In/Data Out

CEU

– Chip Enable Upper Byte

CEL

– Chip Enable Lower Byte

– Write Enable

OE – Output Enable

– Power Supply (+5V)

GND – Ground

DESCRIPTION

The DS1258 128K x 16 Nonvolatile SRAMs are

2,097,152 bit fully static, nonvolatile SRAMs, organized

as 131,072 words by 16 bits. Each NV SRAM has a self

contained lithium energy source and control circuitry

which constantly monitors V

for an out–of–tolerance

condition. When such a condition occurs, the lithium

energy source is automatically switched on and write

protection is unconditionally enabled to prevent data

corruption. DIP–package DS1258 devices can be used

in place of solutions which build nonvolatile 128K x 16

memory by utilizing a variety of discrete components.

There is no limit to the number of write cycles which the

DS12658Y/AB can accept, and no additional support

circuitry is required for microprocessor interfacing.

1 2 3 4 5 6 7 8 9

Resumo do Conteúdo

Página 1 - 128K x 16 Nonvolatile SRAM

Página 2 - READ/WRITE FUNCTION Table 1

DS1258Y/AB100395 2/9READ MODEThe DS1258 devices execute a read cycle wheneverWE (Write Enable) is inactive (high) and either/both ofCEU or CEL (Chip E

Página 3 - FRESHNESS SEAL

DS1258Y/AB100395 3/9DATA RETENTION MODEThe DS1258AB provides full functional capability forVCC greater than 4.75 volts, and write protects by 4.5volts

Página 4 - 100395 4/9

DS1258Y/AB100395 4/9ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to Ground –0.3V to +7.0VOperating Temperature 0°C to +70°C, –40°C to +85°C fo

Página 5

DS1258Y/AB100395 5/9(VCC=5V ± 5% for DS1258AB)AC ELECTRICAL CHARACTERISTICS (tA: See Note 10) (VCC=5V ± 10% for DS1258Y)PARAMETER SYMBOLDS1258Y–70DS12

Página 6 - WRITE CYCLE 1

tWCVILVIHVILVIHVILVIHADDRESSESCEU, CELWEDOUTDINDATA IN STABLEtAWtWPtWR2VIHVILVILVILVIHVIHVILVILtCOEtODWtDStDH2VILVIHVILVIHSEE NOTES 2, 3, 4, 6, 7 AND

Página 7

DS1258Y/AB100395 7/9POWER-DOWN/POWER-UP CONDITIONVCC3.2VtFtPDtRtRECDATA RETENTIONTIMEtDRLEAKAGE CURRENTIL SUPPLIED FROMLITHIUM CELLWE, CEU, CELDS1230Y

Página 8 - ORDERING INFORMATION

DS1258Y/AB100395 8/94. tDS is measured from the earlier of CEU or CEL or WE going high.5. These parameters are sampled with a 5 pF load and are not 10

Página 9

DS1258Y/AB100395 9/9DS1258Y/AB NONVOLATILE SRAM 40–PIN 740 MIL EXTENDED MODULEA1CFGKDHBEJDIM MIN MAX40-PINPKGA IN.MMB IN.MMC IN.MMD IN.MME IN.MMF IN.M

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Rainbow-electronics DS1258Y_AB Manual do Utilizador

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