1Features•Fast Read Access Time - 150 ns•Fast Byte Write - 200 µs or 1 ms•Self-Timed Byte Write Cycle– Internal Address and Data Latches– Internal Con

AT28C1710Packaging Information.045(1.14) X 45°PIN NO. 1IDENTIFY.025(.635) X 30° - 45°.012(.305).008(.203).021(.533).013(.330).530(13.5).490(12.4).030(

AT28C1711

© Atmel Corporation 1998.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

AT28C172The AT28C17 is accessed like a static RAM for the read orwrite cycles without the need of external components. Dur-ing a byte write, the addre

AT28C173Device OperationREAD:The AT28C17 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory location de

AT28C174Notes: 1. X can be VIL or VIH.2. Refer to AC Programming Waveforms.3. VH = 12.0V ± 0.5V.DC and AC Operating RangeAT28C17-15Operating Temperatu

AT28C175AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may be del

AT28C176AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Typ Max UnitstAS, tOESAddress, OE Set-up Time 10 nstA

AT28C177Notes: 1. These parameters are characterized and not 100% tested.2. See AC Read Characteristics.Data Polling WaveformsChip Erase WaveformstS =

AT28C178

AT28C179Notes: 1. See Valid Part Numbers table below.2. The 28C17 200 ns and 250 ns speed selections have been removed from valid selections table and