
MAX1385/MAX1386
Dual RF LDMOS Bias Controllers
with I
2
C/SPI Interface
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(GATEV
DD
= +5.5V for the MAX1385, GATEV
DD
= +11V for the MAX1386, AV
DD
= DV
DD
= +5V, external V
REFADC
= +2.5V, external V
REF-
DAC
= +2.5V, C
REF
= 0.1µF, unless otherwise noted. T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Av
PGA
= 2 900
Av
PGA
= 10 720
Sense-Amplifier Bandwidth
Av
PGA
= 25 290
kHz
LDMOS GATE DRIVER (GAIN = 2 and 4)
I
GATE
= ±1mA 0.75
GATEV
DD
- 0.75
Output Gate-Drive Voltage Range V
GATE
I
GATE
= ±10mA 1
GATEV
DD
- 1
V
Output Impedance R
GATE
Measured at DC 0.1 Ω
V
GATE
Settling Time t
GATE
Settles to within ±0.5% of final value;
R
SERIES
= 50Ω, C
GATE
= 15µF
10 ms
No series resistance, R
SERIES
= 0Ω 010
Output Capacitive Load (Note 1) C
GATE
R
SERIES
= 50Ω 0 25,000
nF
V
GATE
Noise RMS noise; 1kHz - 1MHz 250 nV/√Hz
Maximum Power-On Transient ±100 mV
Output Short-Circuit Current Limit I
SC
1s, sinking or sourcing ±25 mA
MAX1385, LOCODE = 128, HICODE = 180 ±6 ±20
Total Unadjusted Error
No Autocalibration and Offset
Removal (Note 2)
TUE
MAX1386, LOCODE = 128, HICODE = 180 ±12 ±40
mV
MAX1385, LOCODE = 128, HICODE = 180 ±1 ±8
Total Adjusted Error
With Autocalibration and Offset
Removal
TUE
MAX1386, LOCODE = 128, HICODE = 180 ±2 ±16
mV
MAX1385, V
GATE
> 1V ±15
Drift
MAX1386, V
GATE
> 1V ±30
µV/°C
Clamp to Zero Delay 1µs
Output Safe Switch On-
Resistance
R
OPSW
GATE_ clamped to AGND (Note 3) 500 Ω
MAX1385 300
Amplifier Bandwidth
MAX1386 150
kHz
Amplifier Slew Rate 0.375 V/µs
MONITOR ADC DC ACCURACY
Resolution N
ADC
12 Bits
Differential Nonlinearity DNL
ADC
±0.5 ±2 LSB
Integral Nonlinearity INL
ADC
(Note 4) ±0.6 ±2 LSB
Offset Error ±2 ±4 LSB
Gain Error (Note 5) ±2 ±4 LSB
Gain Temperature Coefficient ±0.4 ppm/°C
Offset Temperature Coefficient ±0.4 ppm/°C
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