MAX6870/MAX6871
EEPROM-Programmable Hex/Quad
Power-Supply Sequencers/Supervisors with ADC
_______________________________________________________________________________________ 9
Pin Description (continued)
FUNCTION
17 17 GPI4
General-Purpose Logic Input 4. An internal 10µA current source pulls GPI4 to GND. Configure
GPI4 to control watchdog timer functions or the programmable outputs.
18 18 GPI3
General-Purpose Logic Input 3. An internal 10µA current source pulls GPI3 to GND. Configure
GPI3 to control watchdog timer functions or the programmable outputs.
19 19 GPI2
General-Purpose Logic Input 2. An internal 10µA current source pulls GPI2 to GND. Configure
GPI2 to control watchdog timer functions or the programmable outputs.
20 20 GPI1
General-Purpose Logic Input 1. An internal 10µA current source pulls GPI1 to GND. Configure
GPI1 to control watchdog timer functions or the programmable outputs.
21 21 ABP
Internal Power-Supply Output. Bypass ABP to GND with a 1µF ceramic capacitor. ABP powers
the internal circuitry of the MAX6870/MAX6871. ABP supplies the input voltage to the internal
charge pumps when the programmable outputs are configured as charge-pump outputs. Do
not use ABP to supply power to external circuitry.
22 22 DBP
Internal Digital Power-Supply Output. Bypass DBP to GND with a 1µF ceramic capacitor. DBP
supplies power to the EEPROM memory and the internal logic circuitry. Do not use DBP to
supply power to external circuitry.
23 23
Auxiliary Input 2. A 10-bit ADC monitors the input voltage at AUXIN2. The high-impedance
AUXIN2 input accepts input voltages up to V
REFIN
. AUXIN2 does not influence EEPROM-
configurable power-supply sequencing or reset detection functions.
24 24
Auxiliary Input 1. A 10-bit ADC monitors the input voltage at AUXIN1. The high-impedance
AUXIN1 input accepts input voltages up to V
REFIN
. AUXIN1 does not influence EEPROM-
configurable power-supply sequencing or reset detection functions.
25 — IN6
Voltage Input 6. Configure IN6 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN6
to GND with a 0.1µF capacitor installed as close to the device as possible.
26 — IN5
Voltage Input 5. Configure IN5 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN5
to GND with a 0.1µF capacitor installed as close to the device as possible.
27 27 IN4
Voltage Input 4. Configure IN4 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN4
to GND with a 0.1µF capacitor installed as close to the device as possible.
28 28 IN3
Voltage Input 3. Configure IN3 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN3
to GND with a 0.1µF capacitor installed as close to the device as possible.
29 29 IN2
Bipolar Voltage Input 2. Configure IN2 to detect negative voltage thresholds from -2.5V to
-15.25V in 50mV increments or -1.25V to -7.625V in 25mV increments. Alternatively, configure
IN2 to detect positive voltage thresholds from +2.5V to +15.25V in 50mV increments or +1.25V
to +7.625V in 25mV increments. For improved noise immunity, bypass IN2 to GND with a 0.1µF
capacitor installed as close to the device as possible.
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