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146

8052B–AVR–09/08

ATmega4HVD/8HVD

Notes: 1. All DC Characteristics contained in this data sheet are based on simulation and characterization of other AVR microcon-

trollers manufactured in the same process technology. These values are preliminary values representing design targets, and

will be updated after characterization of actual silicon.

2. These numbers assume the use of one external N-channel FET of model TPCS8210. If other FETs are used, the numbers

may deviate somewhat. The equivalent capacitive loads at OC and OD are around 1.2 nF. Rise and fall times scales approx-

imately proportional to the capacitive loading.

3. VFET = 4V, I

load

= 500 nA.

Table 26-6. FET Driver Outputs specification

(1)

, T

= -20°C to 85°C, VFET = 2.4 to 4.2V (unless otherwise noted)

Parameter Condition Min. Typ. Max. Units

VFET DC level

(2)

1 cell DUVR operation 2.0 2.3 2.5 V

VFET ripple

(2)

1 cell DUVR operation ±0.05 V

OC, OD clamping

voltage

TBD V

OC, OD

(3)

Normal ON operation VFET+2.5 VFET+ 5 VFET+ 7 V

OC, OD Normal OFF operation 0.0 0.1 V

Risetime

(2)

(OC, OD, 0 - 90 %)

Normal ON operation 0.5 10 ms

Falltime

(2)

(OC, OD, 100 - 10 %)

Normal OFF operation 5 10 µs

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