SiGe High-Linearity, 2000MHz to 3000MHz
Upconversion/Downconversion Mixer with LO Buffer
MAX2042
2 ______________________________________________________________________________________
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
V
CC
to GND ..........................................................-0.3V to +5.5V
IF+, IF-, LOBIAS to GND .......................... -0.3V to (V
CC
+ 0.3V)
RF, LO Input Power ....................................................... +20dBm
RF, LO Current (RF and LO are DC shorted
to GND through a balun)................................... .............50mA
Continuous Power Dissipation (Note 1) .............................5.0W
B
JA
(Notes 2, 3) ............................................................ +38NC/W
B
JC
(Notes 1, 3) ............................................................ +13NC/W
Operating Case Temperature Range
(Note 4) ........................................................... -40NC to +85NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
CC
= +4.75V to +5.25V, no input AC signals. T
C
= -40NC to +85NC, unless otherwise noted. Typical
values are at V
CC
= +5.0V, T
C
= +25NC, all parameters are production tested.)
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
CC
= +3.0V to +3.6V, no input AC signals. T
C
= -40NC to +85NC, unless otherwise noted. Typical values
are at V
CC
= +3.3V, T
C
= +25NC, all parameters are production tested.)
RECOMMENDED AC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Note 1: Based on junction temperature T
J
= T
C
+ (B
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
Note 2: Junction temperature T
J
= T
A
+ (B
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
CC
4.75 5.0 5.25 V
Supply Current I
CC
138 150 mA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
CC
3.0 3.3 3.6 V
Supply Current I
CC
120 135 mA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency Range
Typical Application Circuit with
C1 = 8.2pF, see Table 1 for details
(Notes 5, 6)
2000 3000 MHz
LO Frequency fLO (Notes 5, 6) 1800 2800 MHz
IF Frequency fIF
Using M/A-Com MABAES0029 1:1
transformer as defined in the Typical
Application Circuit, IF matching components
affect the IF frequency range (Notes 5, 6)
50 500 MHz
LO Drive PLO (Notes 5, 6) -3 0 +3 dBm
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