MAX66140
ISO 15693-Compliant Secure Memory
2 _______________________________________________________________________________________
ABRIDGED DATA SHEET
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
A
= -25°C to +50°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Guaranteed by simulation, not production tested.
Note 2: Write-cycle endurance is degraded as T
A
increases. Not 100% production tested; guaranteed by reliability monitor sampling.
Note 3: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data
sheet limit at operating temperature range is established by reliability testing.
Note 4: System requirement.
Note 5: Production tested at 13.56MHz only.
Note 6: Measured from the time at which the incident field is present with strength greater than or equal to H
(MIN)
to the time at
which the MAX66140’s internal power-on reset signal is deasserted and the device is ready to receive a command frame.
Not characterized or production tested; guaranteed by simulation only.
Maximum Incident Magnetic Field Strength ..........141.5dBµA/m
Operating Temperature Range ...........................-25°C to +50°C
Relative Humidity ..............................................(Water Resistant)
Storage Temperature Range ...............................-25°C to +50°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
SHA-1 ENGINE
SHA-1 Computation Time t
CSHA
(Note 1) Refer to the full data sheet. ms
EEPROM
Programming Time t
PROG
(Note 1) 9 10 ms
Endurance N
CYCLE
At +25°C (Note 2) 200,000 Cycles
Data Retention t
RET
(Note 3) 40 Years
RF INTERFACE
Carrier Frequency f
C
(Notes 4, 5) 13.553 13.560 13.567 MHz
At +25°C, MAX66140E 110.5
Activation Field Strength
(Note 1)
H
MIN
At +25°C, MAX66140K 122.0
dBμA/m
At +25°C, MAX66140E 110.7
Write Field Strength (Note 1) H
WR
At +25°C, MAX66140K 122.4
dBμA/m
Maximum Field Strength H
MAX
At +25°C (Note 1) 137.5 dBμA/m
Power-Up Time t
POR
(Notes 1, 6) 1.0 ms
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