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DS1841

Temperature-Controlled, NV, I

Logarithmic Resistor

4 _______________________________________________________________________________________

Note 1: All voltages are referenced to ground. Currents entering the IC are specified positive and currents exiting the IC are

negative.

Note 2:I

is specified with the following conditions: SCL and SDA = V

, RW and RH floating with Update Mode bit = 1.

Note 3: This is the minimum V

voltage that causes NV memory to be recalled.

Note 4: This is the time from V

> V

POR

until initial memory recall is complete.

Note 5: Guaranteed by design.

Note 6: I

C interface timing shown is for Fast-Mode (400kHz) operation. This device is also backward-compatible with I

C-

Standard Mode timing.

Note 7: C

—total capacitance of one bus line in picofarads.

Note 8: EEPROM write time begins after a STOP condition occurs.

Note 9: Guaranteed by characterization.

C AC ELECTRICAL CHARACTERISTICS (See Figure 3) (continued)

= +2.7V to +5.5V, T

= -40°C to +100°C, timing referenced to V

IL(MAX)

and V

IH(MIN)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

EEPROM Write Time t

(Note 8) 10 20 ms

A0, A1 Setup Time t

SU:A

Before START 0.6 μs

A0, A1 Hold Time t

HD:A

After STOP 0.6 μs

Input Capacitance on

A0, A1, SDA, or SCL

5 10 pF

Startup Time t

2 ms

NONVOLATILE MEMORY CHARACTERISTICS

= +2.7V to +5.5V)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

EEPROM Write Cycles T

= +85°C 50,000 Writes

EEPROM Write Cycles T

= +25°C (Note 9) 200,000 Writes

1 2 3 4 5 6 7 8 9 ... 15 16

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